| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure which realizes high performance interconnection including copper wiring and an insulator having an extremely low dielectric constant (k). SOLUTION: In this structure, wiring is supported by a low-k dielectric material having relatively high durability, such as SiLk(R) or SiO<SB>2</SB>, and then the remaining spaces in the structure are filled with a gap filling dielectric material that has an extremely low-k and a small hardness. Accordingly, in the structure, durable layers for obtaining the strength are bonded with an extremely low-k dielectric material for achieving electric performance of the interconnection. As a result, damages to and an increase in dielectric constant of the extremely low-k dielectric material caused during the manufacturing process are avoided, and delamination in the structure during the metal chemical mechanical polishing processes is prevented. Further, photoresist poisoning troubles caused by interaction with the extremely low-k dielectric material can be removed. COPYRIGHT: (C)2004,JPO |
