| 摘要 |
PROBLEM TO BE SOLVED: To provide a method by which a semiconductor device on which fuse blowing can be performed easily and in which fuse wiring is hardly deteriorated can be manufactured easily. SOLUTION: After a first insulating layer 7 is provided on a substrate 1 on which base wiring 3 and fuse wiring 4 are formed, a contact hole 11b for forming a contact plug 10b and a recess 11a for wiring for forming wiring 10a are formed on the wiring 3. Then, a fuse blowing recess 12 which electrically disconnect the fuse wiring 4 is formed on the wiring 4, and a conductive material is buried inside the recess 11a, the contact hole 11b, and the recess 12. In addition, a second insulating layer 15 having a thickness which is nearly equal to the thickness from the lower surface of the first insulating layer 7 to the bottom section of the recess 12 is provided on the insulating layer 7. After the opening 18 of the recess 12 is formed through the second insulating layer 15, the conductive material existing in the recess 12 is removed. COPYRIGHT: (C)2004,JPO
|
