发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To properly form a conductive plug connected to a capacitor and other conductive capacitors, in a semiconductor device having the capacitor. SOLUTION: A semiconductor device comprises: a first and second conductive plugs 10b and 10a formed in a first insulating film 8; an island-like oxygen barrier metal layer 11 covering the first conductive plug 10b; an oxidation preventing insulating layer 12 formed on the first insulating film 8 and covering the side face of the oxygen barrier metal layer 11; a capacitor Q having a lower electrode 14a formed on the oxygen barrier metal layer 11 and the oxidation preventing insulating layer 12, a dielectric layer 15a formed on the lower electrode 14a, and an upper electrode 16a formed on the dielectric layer 15a; a second insulating film 19 covering the capacitor Q and the oxidation preventing insulating layer 12; a third hole on the second conductive plug 10a formed from the second insulating film 19 to the oxidation preventing insulating layer 12; a third conductive plug 21 formed in the third hole and connected to the second conductive plug 10a. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004146772(A) 申请公布日期 2004.05.20
申请号 JP20030064601 申请日期 2003.03.11
申请人 FUJITSU LTD 发明人 ANDO TAKASHI;HIKOSAKA YUKINOBU;ITO AKIO;WATANABE JUNICHI;MIURA HISAYOSHI;SUEZAWA KENKICHI
分类号 H01L27/105;H01L21/02;H01L21/8246;H01L27/115;(IPC1-7):H01L27/105 主分类号 H01L27/105
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