发明名称 |
METHOD FOR FABRICATING LIGHT-EMITTING DIODE USING NANOSIZE NITRIDE SEMICONDUCTOR MULTIPLE QUANTUM WELLS |
摘要 |
Disclosed is a III-nitride compound semiconductor nanophase opto-electronic cell, comprising a silicon substrate (100), and an amorphous silicon nitride layer (base) (200) formed on the substrate and including III-nitride compound semiconductor nano grains (230) spontaneously formed therein. The nitride semiconductor nanophase opto-electronic cell and the fabrication method thereof according to the present invention are free from the problems of the conventional III-nitride compound semiconductor thin film growth on silicon substrates. Accordingly, a high-quality III-nitride compound semiconductor nanophase opto-electronic cell having no crystalline defect can be provided. Furthermore, the opto-electronic cell according to the present invention does not require a p-type GaN thin film so that there is no possibility of causing crack that is a problem in the conventional method of fabricating a III-nitride compound semiconductor opto-electronic cell using III-nitride thin films grown on silicon substrates. In addition, the number of processes of fabricating the cell is remarkably reduced to result in an economical and productive opto-electronic cell fabrication process.
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申请公布号 |
US2004094756(A1) |
申请公布日期 |
2004.05.20 |
申请号 |
US20020330336 |
申请日期 |
2002.12.30 |
申请人 |
MOON YONG TAE;PARK NAE MAN;KIM BAEK HYUN;PARK SEONG JU |
发明人 |
MOON YONG TAE;PARK NAE MAN;KIM BAEK HYUN;PARK SEONG JU |
分类号 |
H01L21/20;H01L21/205;H01L33/08;H01L33/18;H01L33/24;H01L33/32;(IPC1-7):H01L29/06;H01L31/032;H01L31/033;H01L31/072;H01L31/109 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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