Method of producing a semiconductor-metal contact through a dielectric layer

摘要

What is described here is a method of electrically contacting a semiconductor layer (13) coated with at least one dielectric layer (12). The invention excels itself by the provisions that a metal layer (11) is applied on said dielectric layer (12) and that this metal layer (11) is temporarily locally heated in linear or dotted form by means of a source of radiation (9) in a controlled manner in such a way that a local molten mixture consisting exclusively of said metal layer (11), said dielectric layer (12) as well as said semiconductor layer (13) located directly underneath said dielectric layer (12) is formed, which, upon solidification, leads to an electrical contact between said semiconductor layer (13) and said metal layer (11).