| 摘要 |
PURPOSE: To provide a new method and apparatus for depositing multiple layers of material in-situ using multiple deposition techniques so that such a new method and apparatus would eliminate the need to transfer substrates between various processing chambers, and would reduce the likelihood of void formation. CONSTITUTION: The apparatus capable of performing multiple deposition processes comprises a chamber body; and a gas distribution assembly, wherein the gas distribution assembly comprises a gas conduit in fluid communication with the chamber body; two or more isolated gas inlets equipped with one or more high speed actuating valves in fluid communication with the gas conduit, the valves adapted to alternately pulse two or more gases into the gas conduit; and a mixing channel in fluid communication with the gas conduit, the mixing channel adapted to deliver a continuous flow of one or more compounds into the gas conduit. The apparatus capable of performing multiple deposition processes comprises a chamber body; and a gas distribution assembly, wherein the gas distribution assembly comprises a gas conduit in fluid communication with the chamber body; at least two separate flow paths in fluid communication with the gas conduit at a first end thereof, each isolated flow path having one or more high speed actuating valves; and at least one annular mixing channel disposed about the gas conduit at a second end thereof, the mixing channel in fluid communication with the gas conduit via one or more passageways formed therethrough, wherein the flow paths are isolated from the mixing channel by a pressure differential created within the gas distribution assembly.
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