| 摘要 |
PURPOSE: A method for forming a gate oxide layer of a semiconductor device is provided to improve process reliability and electrical characteristics of the semiconductor device by forming a polysilicon layer between a gate oxide layer and a photoresist pattern and carrying out a patterning process on the gate oxide layer. CONSTITUTION: The first and second region are defined in a semiconductor substrate(301). The first gate oxide layer(302), the first polysilicon layer(303), and the first photoresist pattern are sequentially formed on the semiconductor substrate. A stack structure is formed at the first region alone by selectively etching the first polysilicon layer and the first gate oxide layer using the first photoresist pattern as an etching mask. The second gate oxide layer(306) is formed at the second region. The second polysilicon layer(307) and the second photoresist pattern are sequentially formed on the resultant structure. A patterning process is carried out on the resultant structure by using the second photoresist pattern as an etching mask.
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