发明名称 |
Method of making a solid state inductor |
摘要 |
A solid-state inductor and a method for forming a solid-state inductor are provided. The method comprises: forming a bottom electrode; forming a colossal magnetoresistance (CMR) thin film overlying the bottom electrode; forming a top electrode overlying the CMR thin film; applying an electrical field treatment to the CMR thin film in the range of 0.4 to 1 megavolts per centimeter (MV/cm) with a pulse width in the range of 100 nanoseconds (ns) to 1 millisecond (ms); in response to the electrical field treatment, converting the CMR thin film into a CMR thin film inductor; applying a bias voltage between the top and bottom electrodes; and, in response to the applied bias voltage, creating an inductance between the top and bottom electrodes. When the applied bias voltage is varied, the inductance varies in response. |
申请公布号 |
US2004095689(A1) |
申请公布日期 |
2004.05.20 |
申请号 |
US20030705066 |
申请日期 |
2003.11.10 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
PAN WEI;HSU SHENG TENG;ZHUANG WEI-WEI |
分类号 |
H01F10/193;H01F21/00;H01F41/24;H01L21/02;H01L27/08;(IPC1-7):G11B5/127 |
主分类号 |
H01F10/193 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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