COMPOUND SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a compound semiconductor substrate having a semiconductor part of a superior characteristic similar to a case when it is formed in an off substrate generated by inclining a face orientation without previously inclining the substrate from the prescribed face orientation and cutting it.

SOLUTION: The substrate has a region forming a principal surface 102 of a silicon substrate 101 and a region forming a slope 104 where a direction inclined by an inclination angle 103 of 1° to 10° against a normal direction of the main surface 102 is set to be the normal direction. A compound semiconductor layer 107 whose crystal structure differs from the silicon substrate 101 is formed on the region where the slope 104 is formed.

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