| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser capable of continuous oscillation and longevity. SOLUTION: A nitride semiconductor laser device has a n-type nitride semiconductor layer 2, an active layer 3, and a p-type nitride semiconductor layer 4, in the order named, on upper part of a sapphire substrate 1. A centerline (a) which is equal to a width of a ridge stripe formed in a part of the above p-type nitride semiconductor layer is off from a centerline (b) of the active layer in vertical direction to the sapphire substrate. The nitride semiconductor laser device is equipped with a positive electrode 5 and negative electrode 7, which is on the n-type nitride semiconductor layer side, on the same side. This nitride semiconductor laser device has a layer including indium at least in the nitride semiconductor layer, and has a pad electrode 6 on the positive electrode. A bonding wire connected electrically to the pad electrode 6 is wire bonded to a side away from the negative electrode 7 with a plumb line (c) from the center of bonding to the substrate being off from the centerline of the ridge stripe. COPYRIGHT: (C)2004,JPO
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