| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for removal of a substance from a substrate for etching and/or cleaning applications, that is, in one embodiment, a process for removing a substance having a dielectric constant greater than silicon dioxide from a substrate. SOLUTION: By reacting the substance with a reactive agent that comprises at least one member from the group consisting of a halogen-containing compound, a boron-containing compound, a hydrogen-containing compound, a nitrogen-containing compound, a chelating compound, a carbon-containing compound, a chlorosilane, a hydrochlorosilane, or an organochlorosilane, a volatile product is formed. Then, the volatile product is removed from the substrate to thereby remove the substance from the substrate. COPYRIGHT: (C)2004,JPO
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