| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element which can effectively reduce a coercive force Hc and its fluctuation, and can obtain a superior asteroid curve, and to provide a magnetic memory device MRAM including the magnetoresistance effect element as a memory device. SOLUTION: This magnetoresistance effect element is composed based on a found fact that the fluctuation of the coercive force Hc considerably depends on the shape of the magnetoresistance effect element or a memory element. Namely, in the magnetoresistance effect element, at least a pair of ferromagntic layers 5, 7 are laminated by interposing an inner layer 6 so as to be opposed to each other, and by conducting a current in the direction perpendicular to laminated faces, a change of magnetoresistance can be obtained. Since the thickness of the peripheral part of the information recording layer or ferromagntic layer 7 is thinner than the thickness of the central part, the pinning effect of magnetization by the peripheral part can be reduced. COPYRIGHT: (C)2004,JPO
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