| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to restrain the generation of a dishing phenomenon in the formation of the isolation layer by using a nitride layer as the isolation layer. CONSTITUTION: An oxide layer(3) is deposited on a semiconductor substrate(1) as an etch stop layer. The isolation region of the semiconductor substrate is exposed by selectively carrying out an etching process on the oxide layer. A trench(5) is formed on the resultant structure by etching the exposed semiconductor substrate. A nitride layer(7) is deposited on the entire surface of the resultant structure for completely filling the trench. The nitride layer is selectively removed from the resultant structure by carrying out a reverse etch-back process. A CMP(Chemical Mechanical Polishing) process is carried out on the nitride layer for exposing the oxide layer. The oxide layer is then removed from the resultant structure.
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