Deposition of material on silicon carbide substrate wafer, comprises preparing wafer with growth- and thermal radiation absorption surfaces, then heating wafer for MOVPE deposition

摘要

A wafer (1) is prepared, and has a growth surface (4) for later material deposition. A thermal radiation absorption layer (2) is applied to the rear (5), opposite the growth surface. The substrate is heated to the deposition temperature, and the material (3) is deposited onto the growth surface of the wafer using MOVPE (metal organic vapor phase epitaxy).