Halbleiterbauelement

摘要

A trench (30) having wall region (32b) is formed in semiconductor substrate (20). An upper trench section (30o) is included in wall regions of trench. A contact region is formed outside and proximate to trench in the region of upper trench section. A terminal region for electrical connection is formed within the trench. A trench side region having width narrower than width of trench is included in the trench. Independent claims are also included for the following: (1) trench structure transistor; (2) trench MOSFET; (3) insulated gate bipolar transistor; and (4) field plate transistor.