发明名称 |
XE PREAMORPHIZING IMPLANTATION |
摘要 |
A SOI substrate (101) is preamorphized by ion implanting Xe 15 prior to forming source/drain extensions (21) and source/drain regions (41), thereby virtually eliminating or significantly reducing floating body effects. Other aspects comprise ion implanting a Xe 2 + into a bulk silicon or SOI substrate to effect preeamorphization prior to forming source/drain extensions and regions having shallow junctions with reduced vertical and lateral straggle. |
申请公布号 |
EP1419521(A1) |
申请公布日期 |
2004.05.19 |
申请号 |
EP20020736550 |
申请日期 |
2002.04.05 |
申请人 |
ADVANCED MICRO DEVICES INC. |
发明人 |
BUYNOSKI, MATTHEW, STEPHEN;NG, CHE-HOO |
分类号 |
H01L21/20;H01L21/265;H01L21/324;H01L21/336;H01L29/78;H01L29/786;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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