Passive infra red beam sensor with depletion layer FET and self-conducting MOSFET, is connected to second similar transistor

摘要

A second depletion layer FET (6) or self-conducting MOSFET is provided. Its source is connected with the drain of the first depletion layer FET (2) or the self-conducting MOSFET. The gate of the second transistor component (e.g. the second depletion layer FET, 6) is at earth potential and its drain delivers the supply voltage.