发明名称 Gas switching during an etch process to modulate the characteristics of the etch
摘要 Gas switching is used during an etch process to modulate the characteristics of the etch. The etch process comprises a primary step and an secondary step that are repeated at least once. For example, the primary step may result in a high etch rate of oxide (108) while the secondary step results in a low etch rate of oxide and high etch rate of another material (114). <IMAGE>
申请公布号 EP1235263(A3) 申请公布日期 2004.05.19
申请号 EP20020100159 申请日期 2002.02.20
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 JIANG, PING;CELIL, FRANCIS G.
分类号 H01L21/302;H01L21/311;H01L21/768 主分类号 H01L21/302
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