发明名称 |
Gas switching during an etch process to modulate the characteristics of the etch |
摘要 |
Gas switching is used during an etch process to modulate the characteristics of the etch. The etch process comprises a primary step and an secondary step that are repeated at least once. For example, the primary step may result in a high etch rate of oxide (108) while the secondary step results in a low etch rate of oxide and high etch rate of another material (114). <IMAGE> |
申请公布号 |
EP1235263(A3) |
申请公布日期 |
2004.05.19 |
申请号 |
EP20020100159 |
申请日期 |
2002.02.20 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
JIANG, PING;CELIL, FRANCIS G. |
分类号 |
H01L21/302;H01L21/311;H01L21/768 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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