发明名称 Precursor for chemical vapor deposition and thin film formation process using the same
摘要 A precursor for chemical vapor deposition comprising a metal compound represented by formula (I): <CHEM> wherein a plurality of R's, which may be the same or different, each represent an alkyl group having 1 to 8 carbon atoms; and M represents a metallic element selected from the group consisting of titanium, germanium, zirconium, tin, hafnium, and lead.
申请公布号 EP1420024(A1) 申请公布日期 2004.05.19
申请号 EP20020025522 申请日期 2002.11.13
申请人 ASAHI DENKA CO., LTD. 发明人 ONOZAWA, KAZUHISA;SATO, HIROKI
分类号 C07F7/08;C07F7/22;C23C16/40 主分类号 C07F7/08
代理机构 代理人
主权项
地址