发明名称 Method of forming a via hole through a glass wafer
摘要 A method of forming a via hole through a glass wafer includes depositing a material layer (110) on an outer surface of the glass wafer, the material layer having a selection ratio higher than that of the glass wafer (200), forming a via-patterned portion on one side of the material layer, performing a first etching in which the via-patterned portion is etched to form a preliminary via hole (130), eliminating any remaining patterning material (120) used in the formation of the via-patterned portion, performing a second etching in which the preliminary via hole (130) is etched to form a via hole (130') having a smooth surface and extending through the glass wafer, and eliminating the material layer (110). The method according to the present invention is able to form a via hole through a glass wafer without allowing formation of an undercut or minute cracks, thereby increasing the yield and reliability of MEMS elements. <IMAGE>
申请公布号 EP1419990(A2) 申请公布日期 2004.05.19
申请号 EP20030256961 申请日期 2003.11.04
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, MOON-CHUL;CHOI, HYUNG;JUNG, KYU-DONG;JANG, MI
分类号 H01L21/84;B81B1/00;B81C1/00;(IPC1-7):B81B1/00 主分类号 H01L21/84
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