发明名称 |
Method of forming a via hole through a glass wafer |
摘要 |
A method of forming a via hole through a glass wafer includes depositing a material layer (110) on an outer surface of the glass wafer, the material layer having a selection ratio higher than that of the glass wafer (200), forming a via-patterned portion on one side of the material layer, performing a first etching in which the via-patterned portion is etched to form a preliminary via hole (130), eliminating any remaining patterning material (120) used in the formation of the via-patterned portion, performing a second etching in which the preliminary via hole (130) is etched to form a via hole (130') having a smooth surface and extending through the glass wafer, and eliminating the material layer (110). The method according to the present invention is able to form a via hole through a glass wafer without allowing formation of an undercut or minute cracks, thereby increasing the yield and reliability of MEMS elements. <IMAGE> |
申请公布号 |
EP1419990(A2) |
申请公布日期 |
2004.05.19 |
申请号 |
EP20030256961 |
申请日期 |
2003.11.04 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, MOON-CHUL;CHOI, HYUNG;JUNG, KYU-DONG;JANG, MI |
分类号 |
H01L21/84;B81B1/00;B81C1/00;(IPC1-7):B81B1/00 |
主分类号 |
H01L21/84 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|