NITRIDE SEMICONDUCTOR ELEMENT AND PRODUCTION METHOD FOR NITRIDE SEMICONDUCTOR ELEMENT

摘要

Disclosed are a nitride semiconductor device excellent in characteristics, which has a device structure grown into a three-dimensional shape by selective growth, and a method of fabricating the nitride semiconductor device. The nitride semiconductor device according to the present invention includes a crystal layer grown into a three-dimensional shape having a side surface portion (16s) and an upper layer portion (16t), wherein and electrode layer (21) is formed on the upper layer portion via a high resistance region formed by an undoped gallium nitride layer (17) or the like. Since the high resistance region is provided on the upper layer portion (16t), a current flows so as to bypass the high resistance region of the upper layer portion (16t), to form a current path extending mainly along the side surface portion (16s) while avoiding the upper layer portion (16t), thereby suppressing the flow of a current in the upper layer portion (16t) poor in crystallinity. <IMAGE>