Film-forming system and film-forming method

摘要

A film-forming system comprising a vacuum chamber 1 and an electroconductive partition plate 101 dividing said vacuum chamber into a plasma generating space 8 provided with a high-frequency electrode 3 and a film-forming treatment space 9 provided with a substrate-retaining mechanism 6 for holding a substrate 10 mounted thereon. A gas for generating desired active species by discharge plasma is introduced into the plasma generating space. Said desired active species are supplied to the film-forming treatment space 9 through a plurality of penetration holes 41 formed in the electroconductive partition plate for communicating the plasma generating space 8 with the film-forming treatment space 9. Said electroconductive partition plate 101 has a first internal space 31 separated from the plasma generating space 8 and communicating with the film-forming treatment space 9 via a plurality of material gas diffusion holes 32. A material gas is introduced from the outside into said first internal space 31 and supplied into the film-forming treatment space 9 through a plurality of said material gas diffusion holes 32. Said electroconductive partition plate 101 further has a second internal space 21 separated from said first internal space 31 and communicating with said film-forming treatment space 9 via a plurality of gas diffusion holes 22. A gas other than said material gas is introduced from the outside into said second internal space 21. A film is deposited on the substrate 10 by a reaction between said active species and said material gas supplied to said film-forming treatment space 9. <IMAGE>