发明名称 |
Inductively coupled RF plasma reactor and plasma chamber enclosure structure therefor |
摘要 |
A plasma chamber enclosure structure for use in an RF plasma reactor. The plasma chamber enclosure structure being a single-wall dielectric enclosure structure of an inverted cup-shape configuration and having ceiling with an interior surface of substantially flat conical configuration extending to a centrally located gas inlet. The plasma chamber enclosure structure having a sidewall with a lower cylindrical portion generally transverse to a pedestal when positioned over a reactor base, and a transitional portion between the lower cylindrical portion and the ceiling. The transitional portion extends inwardly from the lower cylindrical portion and includes a radius of curvature. The structure being adapted to cover the base to comprise the RF plasma reactor and to define a plasma-processing volume over the pedestal. The structure being formed of a dielectric material of silicon, silicon carbide, quartz, and/or alumina being capable of transmitting inductive power therethrough from an adjacent antenna.
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申请公布号 |
US6736931(B2) |
申请公布日期 |
2004.05.18 |
申请号 |
US20010970121 |
申请日期 |
2001.10.02 |
申请人 |
COLLINS KENNETH S.;RICE MICHAEL;TROW JOHN;BUCHBERGER DOUGLAS;RODERICK CRAIG A. |
发明人 |
COLLINS KENNETH S.;RICE MICHAEL;TROW JOHN;BUCHBERGER DOUGLAS;RODERICK CRAIG A. |
分类号 |
H05H1/46;B01D53/22;B01D53/26;C23C16/517;C23F4/00;H01J37/32;H01L21/205;H01L21/302;H01L21/3065;H01L21/311;H01L21/683;(IPC1-7):C23C16/00;C23C14/34;C23C1/00 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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