| 摘要 |
A manufacturing method for a semiconductor intergraded circuit device comprises forming, over a gate insulating film which has been formed over a gate insulating film which has been formed over the main surface of a single crystal silicon substrate to have an effective film thinkness less than 5 nm in terms of SiO2, a W film as a gate electrode material, and heat treating the silicon substrate in a water-vapor- and hydrogen-containing gas atmosphere having a water vapor/hydrogen partial pressure ratio set at a ratio permitting oxidation of silicon without substantial oxidation of the W film, whereby defects of the gate insulating film right under the W film are repaired. In this way, in a MISFET having a metal gate electrode formed over a ultra-thin gate insulating film having an effective film thinkness less than 5 nm in term of SiO2, defectes of the gate insulating film can be repaired without oxidizing the metal gate electrode.
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