发明名称 Read only memory
摘要 N-channel MOS transistors are connected to bit lines so as to correspond to the data to be read out. A constant current outputting circuit uses an off leakage current of load transistors similar to the N-channel MOS transistors as a reference current to constitute a current mirror circuit having a mirror ratio according to the number of the N-channel MOS transistors connected to each bit line. P-channel MOS transistors of the constant current outputting circuit are connected to the bit lines and supply a current according to the off leakage currents of the N-channel MOS transistors. Thus, malfunctions caused by such as off leakage currents of transistors or the like can be reliably prevented without causing an increase in access time.
申请公布号 US6738280(B2) 申请公布日期 2004.05.18
申请号 US20020195379 申请日期 2002.07.16
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 SATOMI KATSUJI
分类号 G11C17/00;G11C17/12;G11C17/18;(IPC1-7):G11C17/00;G11C7/00 主分类号 G11C17/00
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