GALLIUM NITRIDE DOPED WITH RARE EARTH IONS AND METHOD AND STRUCTURE FOR ACHIEVING VISIBLE LIGHT EMISSION

摘要

The present invention is a GaN semiconductor crystal that is doped with at least one RE ion, wherein the structure has been annealed at a temperature o f at least about 1,000 degrees Celsius. As a result, the structure is preferab ly adapted to provide a luminescence spectra over the range from about 380 nanometers to about 1000 nanometers when excited by a suitable excitation. T he present invention also includes apparatus and methods for producing cathodoluminescence and electroluminescence that may be suitable for use in any of a wide variety of optoelectronic devices.