| 摘要 |
A semiconductor device having a trench isolation structure which has a high insulating characteristic, is suitable for miniaturizing a semiconductor device, and prevents a leakage current, as well as a method of manufacturing the semiconductor device. A small-density polysilicon film is formed between a semiconductor substrate and a CVD silicon oxide film in the area within a trench where a trench isolation structure is to be formed. Mechanical stress that develops between the semiconductor substrate and the CVD silicon oxide film during heat treatment is mitigated by changing the crystalline structure of the polysilicon film.
|
