发明名称 |
Thin film magnetic memory device with high-accuracy data read structure having a reduced number of circuit elements |
摘要 |
In a data read operation, a selected memory cell and a reference memory cell are connected to complementary first and second data lines via complementary first and second bit lines, respectively. A differential amplifier supplies passing currents of the memory cell and the reference cell to complementary first and second data buses, and amplifies a passing current difference between the first and second data buses occurring corresponding to an electric resistance difference between the memory cell and reference cell to produce a voltage difference of a polarity corresponding to the level of the stored data of the selected memory cell between first and second nodes.
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申请公布号 |
US6738285(B2) |
申请公布日期 |
2004.05.18 |
申请号 |
US20020190668 |
申请日期 |
2002.07.09 |
申请人 |
RENESAS TECHNOLOGY CORP.;MITSUBISHI ELECTRIC ENG |
发明人 |
TANIZAKI HIROAKI;HIDAKA HIDETO;OOISHI TSUKASA |
分类号 |
G11C11/14;G11C11/15;G11C11/16;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):G11C11/00 |
主分类号 |
G11C11/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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