| 摘要 |
To enhance the emission output of the light emitting device including an active layer made of nitride semiconductor containing In, the light emitting device having an active layer between the n-type semiconductor layer and the p-type semiconductor layer, characterized in that the active layer comprises an well layer made of Inx1Ga1-x1N (x1>0) containing In and a first barrier layer made of Aly2Ga1-y2N (y2>0) containing Al formed on the well layer.
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