| 发明名称 |
Semiconductor device and method of manufacturing the same |
| 摘要 |
Disclosed is a method of manufacturing a semiconductor device, comprising forming a metal compound film directly or indirectly on a semiconductor substrate, forming a metal-containing insulating film consisting of a metal oxide film or a metal silicate film by oxidizing the metal compound film, and forming an electrode on the metal-containing insulating film.
|
| 申请公布号 |
US6737716(B1) |
申请公布日期 |
2004.05.18 |
| 申请号 |
US20000492780 |
申请日期 |
2000.01.28 |
| 申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
MATSUO KOUJI;SAITO TOMOHIRO;SUGURO KYOICHI;NAKAMURA SHINICHI |
| 分类号 |
H01L21/02;H01L21/28;H01L21/316;H01L21/334;H01L21/336;H01L21/8238;H01L21/8242;H01L29/49;H01L29/51;(IPC1-7):H01L29/76;H01L31/062;H01L23/48;H01L29/12 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
