| 发明名称 |
Method for manufacturing a semiconductor device |
| 摘要 |
A method of processing a semiconductor substrate involves etching a SiOF layer with HF or HF+H2O. The method can be used to form hollow structures in semiconductor substrates and thus provides a way to make interlayer insulators.
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| 申请公布号 |
US6737357(B2) |
申请公布日期 |
2004.05.18 |
| 申请号 |
US20030365756 |
申请日期 |
2003.02.12 |
| 申请人 |
ASM JAPAN K.K. |
发明人 |
SHIMIZU AKIRA;OZAKI FUMITOSHI |
| 分类号 |
H01L21/301;H01L21/311;H01L21/316;H01L21/768;H01L23/522;(IPC1-7):H01L21/301 |
主分类号 |
H01L21/301 |
| 代理机构 |
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