发明名称 |
Method of fabricating a trench structure substantially filled with high-conductivity material |
摘要 |
A trench structure that is substantially filled with high-conductivity material such as refractory metal particularly suitable for fast switching trench MOSFET applications. The trench is first lined by a dielectric material such as silicon dioxide. A layer of polysilicon is then formed on the dielectric material and provides buffering for stress relief. The trench is then filled substantially with refractory metal such as tungsten.
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申请公布号 |
US6737323(B2) |
申请公布日期 |
2004.05.18 |
申请号 |
US20010879029 |
申请日期 |
2001.06.11 |
申请人 |
FAIRCHILD SEMICONDUCTOR CORPORATION |
发明人 |
MO BRIAN S. |
分类号 |
H01L21/28;H01L21/285;H01L21/336;H01L29/423;H01L29/43;H01L29/49;H01L29/51;H01L29/78;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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