SEMICONDUCTOR MEMORY DEVICE HAVING INTERNAL VOLTAGE GENERATION CIRCUIT REDUCING REFRESH CURRENT

摘要

PURPOSE: A semiconductor memory device having an internal voltage generation circuit is provided to reduce a refresh current(ICC6). CONSTITUTION: An internal voltage generation control part(100) generates an internal voltage control signal through a comparator comparing a reference voltage with an internal voltage. And an internal voltage driver part(200) generates the internal voltage from an external voltage in response to the internal voltage control signal. During a normal operation like a write operation and a read operation, all of the current sync part transistors in the comparator are operated, and a part of the transistors are operated during a refresh operation.