发明名称 |
METHOD FOR FABRICATING SILICON SOLAR CELL |
摘要 |
<p>PURPOSE: A method for fabricating a silicon solar cell is provided to reduce fabricating cost by decreasing the consumption of a material, and to increase adaptability by maintaining the efficiency of the solar cell. CONSTITUTION: An oxide layer(23) is formed on a p-type silicon substrate(21). A photoresist pattern is formed on the oxide layer formed on the silicon substrate. The oxide layer is etched by using the photoresist pattern. The photoresist pattern is removed and a texturing process is performed. The oxide layer on the silicon substrate is etched. Phosphorous ions are diffused to the front and rear surfaces of the silicon substrate to form an n¬+ semiconductor layer(22). An oxide layer is formed on the n¬+ semiconductor layer on the silicon substrate. Aluminum is deposited on the rear surface of the silicon substrate and is sintered to form a p¬+ semiconductor layer. A photolithography process is performed to form a conductive metal layer in a predetermined region of the front surface of the silicon substrate. A lift-off process is performed. A conductive metal layer is deposited on the rear surface of the silicon substrate to form a rear surface electrode(24). Silver is electroplated on the conductive metal layer on the front surface of the silicon substrate.</p> |
申请公布号 |
KR100416739(B1) |
申请公布日期 |
2004.05.17 |
申请号 |
KR19970002966 |
申请日期 |
1997.01.31 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO, EUN CHEOL;KIM, DONG SEOP;MIN, YO SEP |
分类号 |
H01L31/04;H01L31/0224;H01L31/06;H01L31/18;(IPC1-7):H01L31/04 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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