发明名称 METHOD FOR DEPOSITING REFLECTIVE LAYER ON FACET OF SEMICONDUCTOR LASER DIODE CHIP BAR
摘要 PURPOSE: A method for depositing a reflective layer on a facet of a semiconductor laser diode chip bar is provided to prevent the damage of a chip bar and deposit easily the reflective layer on the facet by forming sequentially the first spacer of GaAs and the second spacer of Si on a surface of the semiconductor laser diode chip bar. CONSTITUTION: A first spacer(121), a second spacer(122), a semiconductor laser diode chip bar(123), a third spacer(124), and a fourth spacer(125) are sequentially formed into a groove of a coating jig. A reflective layer is deposited by exposing a mirror facet of the semiconductor laser diode chip bar(123) to an opening side of the coating jig. The first and the fourth spacers(121,125) are formed with GaAs. The second and the third spacers(122,124) are formed with Si.
申请公布号 KR20040041259(A) 申请公布日期 2004.05.17
申请号 KR20020069431 申请日期 2002.11.09
申请人 LG ELECTRONICS INC. 发明人 LEE, JEONG HUN
分类号 H01S5/30;(IPC1-7):H01S5/30 主分类号 H01S5/30
代理机构 代理人
主权项
地址