METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of reliably carrying out a selective oxidation process. CONSTITUTION: A gate isolating layer and a gate electrode layer are sequentially formed on a semiconductor substrate(100). A gate electrode(220) is formed by selectively patterning the gate electrode layer. An under-cut region is formed at the lower portion of the gate electrode by partially removing the gate isolating layer. A buffer silicon layer is formed on the entire surface of the resultant structure for filling the under-cut region and enclosing the gate electrode. The buffer silicon layer is oxidized by carrying out a selective oxidation process. Preferably, the gate isolating layer is partially removed by a wet etching process.