| 摘要 |
An abrasive composition for polishing a semiconductor device, comprising cerium oxide, a water-soluble organic compound having at least one group of -COOH, -COOMX (wherein MX is an atom or a functional group capable of substituting a H atom to form a salt), -SO3H or -SO3MY (wherein MY is an atom or a functional group capable of substituting a H atom to form a salt), and water a process for forming shallow trench isolations using this abrasive composition. |
