ETCHING APPARATUS AND METHOD USING ION BEAM SPUTTERING

摘要

PURPOSE: An etching apparatus and its method using ion beam sputtering are provided to be capable of effectively carrying out an etching process. CONSTITUTION: An ion beam sputtering etching apparatus is provided with a vacuum chamber(100) and a target loading head(118) installed at the upper portion in the vacuum chamber. At this time, the target loading head includes a sample support part(112) for supporting a sample(114). The ion beam sputtering etching apparatus further includes a chuck(120) installed at the lower portion in the vacuum chamber opposite to the sample support part of the target loading head, a power supply part(130) for supplying power to the target loading head and the chuck, a gas supply part(140) for supplying inert gas into the vacuum chamber, and an ion beam supply part(150) for supplying ion beam into the vacuum chamber.