SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve the degree of integration of an FPGA(Field Programmable Gate Array) and apply a dual damascene process to the fabrication of the FPGA. CONSTITUTION: A semiconductor device is provided with a semiconductor substrate structure, a lower metal line(24) formed on the semiconductor substrate structure, and interlayer dielectric(25) formed on the entire surface of the resultant structure. The interlayer dielectric has a via hole partially formed on the lower metal line and a line hole formed on the via hole. The semiconductor device further includes an amorphous silicon layer(28) formed at the inner wall of the via hole and a metal part(30) formed on the amorphous silicon layer for filling the via and line hole.