METHOD FOR MANUFACTURING FERROELECTRIC MEMORY DEVICE

摘要

PURPOSE: A method for manufacturing a ferroelectric memory device is provided to secure excellent electrical characteristics and surface characteristics of a ferroelectric thin film by forming the ferroelectric thin film using a two-step sputtering process. CONSTITUTION: A lower electrode(14) is formed on a semiconductor substrate(10). The first ferroelectric thin film is formed on the lower electrode by carrying out the first sputtering process at a low temperature. A ferroelectric thin film(15) is completed by forming the second ferroelectric thin film on the first ferroelectric thin film using the second sputtering process at a high temperature. Crystallization is carried out on the ferroelectric thin film. An upper electrode(16) is formed on the ferroelectric thin film. Preferably, the first and second sputtering process are carried out at the temperature of 25-300 °C and 200-900 °C, respectively.