| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with a high-performance wiring having excellent heat-resistance and adhesiveness. SOLUTION: An iridium layer 16 is formed on an interlayer insulating film 12 and inside an opening 14. This iridium layer 16 is composed of a portion being the lower electrode 16a of a capacitor, and a portion being a wiring 16b for contact with a drain region 6. A ferroelectric layer 18 consisting of a PZT is formed on the portion being the lower electrode 16a of the iridium layer 16, on which an iridium layer 20 as an upper electrode is formed. Since the melting point of iridium is higher than that of aluminum, the iridium is not in danger of being melted even when heat-treating the PZT after forming the iridium layer 16. Also, since the reactiveness of iridium with silicon is low, an unnecessary silicon compound is not prepared in an interface, and then the excellent contact is obtained. COPYRIGHT: (C)2004,JPO |
