| 摘要 |
PROBLEM TO BE SOLVED: To make limitable dielectric breakdown of a gate insulating film to an SBD (pseudo-breakdown) by using fluctuation of highly reliable process, without unnecessarily introducing many defects even though much defect which is not resistant to electrical stress caused by irregular introduction of impurity elements to the gate insulation film is made. SOLUTION: In the semiconductor device having a semiconductor substrate of a first conductivity type, a channel region, there are provided formed at a surface of the semiconductor substrate, source/drain regions of a second conductivity type formed at both sides of the channel region in the semiconductor substrate, an insulating layer formed to cover the channel region and a gate electrode formed on the insulating layer, the insulating layer contains impurity atoms in such a manner that the concentration thereof shows distribution of various values along a surface parallel to the semiconductor substrate. COPYRIGHT: (C)2004,JPO
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