| 摘要 |
PROBLEM TO BE SOLVED: To provide a metal contamination prevention agent for preventing the metal contamination of the surface of a silicon wafer which occurs in a silicon wafer polishing process, and also to provide a method for preventing the metal contamination of the silicon wafer. SOLUTION: The metal contamination prevention agent for a silicon wafer is an aqueous solution of a chelating agent and a pH buffer. The chelating agent is at least one chemical compound selected among a group of chemical compounds having an iminodiacetic acid structure which is composed of of ethylenediamine tetraacetic acid, nitrilotriacetic acid, diethylenetriamine pentaacetic acid, and cyclohexanediamine tetraacetic acid. The pH buffer has pH buffer action between pH3 and pH10. Consequently, when storing the polished silicon wafer in pure water, the silicon wafer can be effectively free from metal contamination by storage water. Especially, when a storage period is long, the degree of metal contamination tends to become high. In this method, however, this tendency is suppressed, and a difference in the degree of contamination due to a difference in a storage time which comes from a batch process is eliminated, and eventually the degree of contamination can be on the whole suppressed low. COPYRIGHT: (C)2004,JPO
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