| 摘要 |
PROBLEM TO BE SOLVED: To provide a laser structure capable of manufacturing a ridge waveguide type semiconductor laser, excellent in temperature characteristics, in a high yield and with good reproducibility. SOLUTION: The semiconductor laser is constituted of a first clad layer which comprises a first material, an active layer, a second clad layer which comprises the first material and a third clad layer of a ridge structure which comprises a second material different from the first material, which are laminated sequentially while a groove, formed along the direction of lamination from the third clad layer side, arrives at the second clad layer at the chip separating position of the semiconductor laser chip. Further, the semiconductor laser is provided with the active layer, the first clad layer as well as the second clad layer which pinch the active layer, the third clad layer of the ridge structure laminated on the second clad layer and an electrode electrically connected to the third clad layer. The electrode of this laser covers an upper part under a condition separated from the surface of the groove beside the ridge. COPYRIGHT: (C)2004,JPO
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