METHOD OF DRYING SEMICONDUCTOR SUBSTRATE AFTER CLEANING

摘要

PROBLEM TO BE SOLVED: To reduce an organic contamination by reducing the number of tanks used in cleaning and drying steps. SOLUTION: A method of drying semiconductor substrate after cleaning includes a step of treating semiconductor substrates 14 by dipping the substrates 14 in a treating liquid 13 supplied from a supply pipe 12 and stored in a treating vessel 11 in a state where the liquid 13 is continuously supplied from the pipe 12 and a step of drying the treated substrates 14 at a temperature of 15-70°C in the air or an N2atmosphere while the substrates 14 are pulled up from the vessel 11 by stopping the supply of the liquid 13 from the pipe 12. The treating liquid 13 stored in the vessel 11 when the substrates 14 are dried while the substrates 14 are pulled up from the vessel 11 is dissolved ozone-containing water or hydrogen ion-containing water maintained at a temperature of 15-30°C. The treating liquid 13 stored in the treating vessel 11 at the time of drying the treated substrates 14 while the substrates 14 are pulled up from the vessel 11 by continuously supplying the treating liquid 13 is an 0.001-0.1N aqueous nitrate solution or a 0.1-30% dissolved hydrogen peroxide-containing water maintained at a temperature of 20-70°C. COPYRIGHT: (C)2004,JPO