| 发明名称 |
Semiconductor crystal film and method for preparation thereof |
| 摘要 |
A multi-layer film 10 is formed by stacking a Si1-x1-y1Gex1Cy1 layer (0<=x1<1 and O<yl<1) having a small Ge mole fraction, e.g., a Si0.785Ge0.2C0.015 layer 13, and a Si1x-2-y2Gex2Cy2 layer (0<x2<=1 and 0<=y2<1) (where x1<x2 and y1>y2) having a high Ge mole fraction, e.g., a Si0.2Ge0.8 layer 12. In this manner, the range in which the multi-layer film serves as a SiGeC layer with C atoms incorporated into lattice sites extends to high degrees in which a Ge mole fraction is high. |
| 申请公布号 |
US2004092085(A1) |
申请公布日期 |
2004.05.13 |
| 申请号 |
US20020298000 |
申请日期 |
2002.12.12 |
| 申请人 |
KANZAWA YOSHIHIKO;SAITOH TOHRU;NOZAWA KATSUYA;KUBO MINORU;HARA YOSHIHIRO;TAKAGI TAKESHI;KAWASHIMA TAKAHIRO |
发明人 |
KANZAWA YOSHIHIKO;SAITOH TOHRU;NOZAWA KATSUYA;KUBO MINORU;HARA YOSHIHIRO;TAKAGI TAKESHI;KAWASHIMA TAKAHIRO |
| 分类号 |
H01L21/205;H01L29/15;H01L29/24;H01L29/737;H01L29/80;(IPC1-7):C30B1/00 |
主分类号 |
H01L21/205 |
| 代理机构 |
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