| 发明名称 |
Process for producing low defect density silicon |
| 摘要 |
The present invention relates to single crystal silicon, in ingot or wafer form, which contains an axially symmetric region which is free of agglomerated intrinsic point defects, and a process for the preparation thereof.
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| 申请公布号 |
US2004089224(A1) |
申请公布日期 |
2004.05.13 |
| 申请号 |
US20030685251 |
申请日期 |
2003.10.14 |
| 申请人 |
MEMC ELECTRONIC MATERIALS, INC. |
发明人 |
FALSTER ROBERT J.;HOLZER JOSEPH C.;MARKGRAF STEVE A.;MUTTI PAOLO;MCQUAID SEAMUS A.;JOHNSON BAYARD K. |
| 分类号 |
C30B29/06;C30B15/00;C30B15/14;C30B15/20;C30B15/22;C30B21/06;C30B27/02;C30B28/10;C30B30/04;C30B33/00;H01L21/322;H01L21/324;(IPC1-7):C30B15/00 |
主分类号 |
C30B29/06 |
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