MAGNETIC RANDOM ACCESS MEMORY, AND PRODUCTION METHOD THEREFOR

摘要

A magnetic random access memory comprising a substrate, an MTJ (Magnetic Tunnel Junction) element formed above the substrate, a first wiring formed above the substrate, and a second wiring formed above the substrate. The MTJ element includes a fixed ferromagnetic layer having a fixed magnetization, a free ferromagnetic laminate, and a tunnel barrier layer interposed between the fixed ferromagnetic layer and the free ferromagnetic laminate. The free ferromagnetic laminate comprised a first ferromagnetic layer disposed joined with the tunnel barrier layer and having a reversible first magnetization, a second ferromagnetic layer having a reversible second magnetization oriented in a direction opposite to the first magnetization, and a non-magnetic conduction layer held between the first and second ferromagnetic layers and being lower in sheet resistance than the first and second ferromagnetic layers. One of the first wiring and the second wiring supplies a write current that reverses the first and second magnetizations to the free ferromagnetic laminate, and the other one of them receives the supplied write current from the free ferromagnetic laminate.