TFT FRAM AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A TFT(Thin Film Transistor) FRAM(Ferroelectric Random Access Memory) and a manufacturing method thereof are provided to be capable of increasing the process margin for forming a ferroelectric layer and simplifying manufacturing processes. CONSTITUTION: A TFT FRAM is provided with a ferroelectric capacitor formed on a substrate(40), the first interlayer dielectric(50) for enclosing the ferroelectric capacitor, a TFT formed on the first interlayer dielectric for being connected with the ferroelectric capacitor, and the second interlayer dielectric(56) for enclosing the TFT. The TFT FRAM further includes a conductive line(62) formed on the second interlayer dielectric for being connected with the TFT. Preferably, an insulation substrate made of glass or quartz is used as the substrate.