| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a wire bonding method which is capable of efficiently securing high lifetime resistance to a power cycle for a power semiconductor device so as to improve the power semiconductor device in reliability without increasing a wire bonding area more than necessary. <P>SOLUTION: The wedge of a wedge tool is set U-shaped in cross section, and an aluminum wire having a diameter of 300 to 500 μm is used as a bonding wire 9. Provided that the bonding length and width of a wire bonded area 9a are represented by L and W, respectively, the ratio L/W is set at 1.3-2.4: 1 to perform ultrasonic bonding to a chip electrode 10a of a powered semiconductor element 10. Alternatively, the wedge cross section of the wedge tool is set to be a V-shape and the diameter of the bonding wire is set to be 300-500um, and the rate of the bonding length L to the width W, L/W is set to be in a range of 1.7 to 2.4:1, and an ultrasonic bonding process is carried out. <P>COPYRIGHT: (C)2004,JPO |
